|Sony's CCD image sensors utilize HAD sensor structure and on-chip microlenses to achieve high sensitivity, low smear and low dark current. By adding this to existing technology and introducing fine fabrication technology such as newly developed "Super HAD CCD" technology and the "EXview HAD CCD" structure, we have made further improvements to fundamental characteristics. Sony will answer the needs of our customers in the future by developing in parallel industry-leading technology and newly developed CCDs.|
IInterline Transfer with a Variable Speed Electronic Shutter
|The Sony CCD employs the world's first inter-line transfer system with a variable speed electronic shutter. The shutter speed is continuously variable from 1/60 second to 1/10000 second, making it possible to clearly photograph a fast moving object or suppress flicker under fluorescent light|
HAD Sensor Adopted
|The HAD sensor is an abbreviation of the Hole-Accumulation Diode sensor newly developed by Sony. It is a photo sensor consisting of a hole accumulation structure added to an n+P diode. |
- High sensitivity
Elimination of the thin polycrystal film Si electrode used in the upper part of the conventional sensor has resulted in higher sensitivity particularly in the short-wavelength range.
- Lower fixed pattern noise caused by dark current
Arrangement of a hole accumulation layer on the sensor surface has reduced dark current generated from the surface.
- No lag
The sensor n+ layer sandwiched between the P well and hole accumulation layer is completely depleted each time the signal charge is read out? Therefore, no lag occurs in the next field.